EIB1414A-4P データシート PDFこの部品の機能は「14.0-14.5ghz 4w Internally Matched Power Fet」です。 |
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部品番号 |
EIB1414A-4P 14.0-14.5GHz 4W Internally Matched Power FET Excelics • • • • • • 14.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 27% TYPICAL) EIB FEATURES HIGH IP3(49dBm TYPICAL) +36.5/+35.5dBm TYPICAL P1d Excelics Semiconductor |
文字列「 EIB1414A4 」「 1414A 」で始まる検索結果です。 |
部品説明 |
200210H14148O.001 Diode ( Rectifier ) American Microsemiconductor |
200210H14148O.002 Diode ( Rectifier ) American Microsemiconductor |
2SB1414 Silicon PNP Epitaxial Transistor Power Transistors 2SB1414 Silicon PNP epitaxial planar type For low-frequency driver/high power amplification Complementary to 2SD2134 3.8±0.2 Unit: mm 7.5±0.2 4.5±0.2 ■ Features • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector Panasonic |
2SD1414 SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1024 ·DARLINGTON APPLICATIONS ·Power amplifier and switching applications SavantIC |
2SK1414 N-Channel Silicon MOSFET Ordering number:EN4230 N-Channel Silicon MOSFET 2SK1414 Ultrahigh-Speed Switching Applications Features · Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability (Adoption of HVP process). Package Dimensions unit:mm 2077A [2SK1414] 20.0 3.3 5 Sanyo Semicon Device |
55PC1414 Spec 55 Wire and Cable Series m o .c U 4 t e e h S a at .D w w w Spec 55 wire is insulated with modified radiation cross-linked ETFE polymer. It has a temperature rating of -65°C to 200°C continuous, and combines the easy handling of a flexible wire with excellent scrape abrasion and cut-through characteris Tyco Electronics |
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