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Datasheet EG1A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | EG1A | HIGH EFFICIENCY RECTIFIER BL GALAXY ELECTRICAL
HIGH EFFICIENCY RECTIFIER
EG1Y(Z)--- EG1A(Z)
VOLTAGE RANGE: 70--- 600 V CURRENT: 1.1---0.6 A
FEATURES Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easilycleaned with freon, alcohol, lsopropand and
similar solvents
MECHANICAL DATA
Case |
 GALAXY ELECTRICAL |
 |
| 4 | EG1A | High Efficiency Rectifiers EG1Y-EG1A
High Efficiency Rectifiers
VOLTAGE RANGE: 70--- 600 V CURRENT: 1.1---0.6 A
Features
Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easilycleaned with freon, alcohol, lsopropand and similar solvents
Mechanical Data
Case: JEDEC DO-41, molded plastic |
 LGE |
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| 3 | EG1A | Silicon Diode SANKEN ELECTRIC CO., LTD.
EG1A
1. Scope The present specifications shall apply to Sanken silicon diode, EG01.
2. Outline
Type
Silicon Diode
Structure
Resin Molded
Flammability : UL94V-0 (Equivalent)
Applications
High Frequency Rectification
3.Absolute maximum ratings No. Item 1 Transient |
 Sanken electric |
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| 2 | EG1A | Ultra-Fast-Recovery Rectifier Diodes Ultra-Fast-Recovery Rectifier Diodes 600V
VRM (V) Package Part Number I F (AV) (A) 30.0 0.5 0.5 0.6 1.0 1.0 1.2 2.0 1.0 (2.0) 3.0 4.0 5.0 5.0 IFSM (A)
50Hz
Half-cycle Sinewave Single Shot
t rr t rr
1 2
: I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point) : I F / I |
 ETC |
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