EEUFR1H151 データシート PDFこの部品の機能は「Aluminum ElectrolytIC Capacitors」です。 |
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部品番号 |
EEUFR1H151 Aluminum Electrolytic Capacitors Aluminum Electrolytic Capacitors/ FR Radial Lead Type Series: FR Type: A ■ Country of origin Malaysia ■ Features ● Low ESR (Same as FM Series) ● Endurance : 5000 h to 10000 h at +105 °C Panasonic |
文字列「 EEUFR1H151 」「 1H151 」で始まる検索結果です。 |
部品説明 |
2SB1151 Low Collector Saturation Voltage NEC |
2SB1151 LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT UNISONIC TECHNOLOGIES CO., LTD 2SB1151 LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation : PD=1.5W(Ta=25 *Complementary to 2SD1691. ) 1 PNP EPITAXIAL SILICON TRANSISTOR TO - 126 *Pb-free plating product number: 2SB1151L PIN CONFIGURATION PIN NO. Unisonic Technologies |
2SB1151 Silicon PNP Power Transistors SavantIC Semiconductor Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SD1691 ·Low saturation voltage ·Large current ·High total power dissipation:PT=1.3W ·Large current capability and wide SOA APPLICATIONS ·DC-DC converter ·Driver of Savantic |
2SD1151 Si NPN Triple Diffused Free Datasheet http:/// Free Datasheet http:/// ETC |
2SK1151 Silicon N-Channel MOS FET 2SK1151(L)(S), 2SK1152(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 Hitachi Semiconductor |
2SK1151L Silicon N-Channel MOS FET 2SK1151(L)(S), 2SK1152(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 Hitachi Semiconductor |
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