EEUFR1C182L データシート PDFこの部品の機能は「Aluminum ElectrolytIC Capacitors」です。 |
検索結果を表示する |
部品番号 |
EEUFR1C182L Aluminum Electrolytic Capacitors Aluminum Electrolytic Capacitors/ FR Radial Lead Type Series: FR Type: A ■ Country of origin Malaysia ■ Features ● Low ESR (Same as FM Series) ● Endurance : 5000 h to 10000 h at +105 °C Panasonic |
文字列「 EEUFR1C182 」「 1C182L 」で始まる検索結果です。 |
部品説明 |
2DB1182Q 32V PNP MEDIUM POWER TRANSISTOR Features BVCEO > -32V IC = -2A High Continuous Collector Current ICM = -3A Peak Pulse Current Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage Ideal for Medium Power Switching or Amplification Applications Totally Lead-Free & Diodes |
2SA1182 Silicon PNP Epitaxial Transistor TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1182 2SA1182 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications Unit: mm • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA • Comp Toshiba Semiconductor |
2SA1182-HF PNP Transistors SMD Type Transistors PNP Transistors 2SA1182-HF SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 +0.22.8 -0.1 ■ Features ● Collector Current Capability IC=-0.5A ● Collector Emitter Voltage VCEO=-32V ● Complementary to 2SC2859-HF. ● Pb−Free Package May be Available. The G� Kexin |
2SB1182 Medium power Transistor Medium power transistor (32V, 2A) 2SB1182 / 2SB1240 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862. Structure Epitaxial planar type PNP silicon transistor Dimensions (Unit : mm) 2SB1182 6.5±0.2 5.1 ROHM Semiconductor |
2SB1182 Silicon PNP Power Transistor isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB1182 DESCRIPTION ·Small and slim package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power dissipation ABSOLUTE MAXIMUM RATINGS(Ta=25� Inchange Semiconductor |
2SB1182 Medium Power Transistor SMD Type Medium Power Transistor 2SB1182 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low VCE(sat). Epitaxial planar type 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0 Kexin |
当社のサイトでは、半導体やセンサーからモーター、電源に至るまで、さまざまな製品のデータシートを簡単に検索してダウンロードできる集中型プラットフォームを提供しています。 |