EEUFC1J221S データシート PDFこの部品の機能は「Aluminum ElectrolytIC Capacitors」です。 |
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部品番号 |
EEUFC1J221S Aluminum Electrolytic Capacitors Panasonic |
文字列「 EEUFC1J221 」「 1J221S 」で始まる検索結果です。 |
部品説明 |
EEUFC1J221 Aluminum Electrolytic Capacitors Panasonic |
EEUFC1J221X Aluminum Electrolytic Capacitors Panasonic |
2SA1221 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS DATA SHEET SILICON TRANSISTORS 2SA1221, 1222 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES • Ideal for use of high withstanding voltage current such as TV vertical deflection output, audio output, and variable power supplies. • Complementary NEC |
2SB1221 Silicon PNP Epitaxial Transistor Transistor 2SB1221 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC3941 Unit: mm 5.0±0.2 4.0±0.2 q q Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. s Absolute Maximum Ratings Parameter Collector Panasonic Semiconductor |
2SB1221 Silicon NPN triple diffusion planer type(For high breakdown voltage general amplification) Transistor 2SB1221 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC3941 Unit: mm 5.0±0.2 4.0±0.2 q q Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. s Absolute Maximum Ratings Parameter Collector Panasonic Semiconductor |
2SD1221 Silicon NPN Diffused Type Transistor TOSHIBA Transistor Silicon NPN Diffused Type (PCT Process) 2SD1221 2SD1221 Audio Frequency Power Amplifier Application Unit: mm • Low collector saturation voltage : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A) • High power dissipation: PC = 20 W (Tc = 25°C) • Comple Toshiba Semiconductor |
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