EETHC2A562LJ データシート PDFこの部品の機能は「Aluminum ElectrolytIC Capacitors」です。 |
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部品番号 |
EETHC2A562LJ Aluminum Electrolytic Capacitors Aluminum Electrolytic Capacitors/ HC Snap-in Type Series: HC Type: TS Discontinued ■ Features ● Endurance : 105 °C 2000 h ● 30 % smaller than series TS-HB ● RoHS directive compliant � Panasonic |
文字列「 EETHC2A562 」「 2A562LJ 」で始まる検索結果です。 |
部品説明 |
2SC2562 Silicon NPN Epitaxial Type w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c Toshiba |
2SC2562 (2SCxxxx) Transistor ( DataSheet : ) Toshiba |
2SC2562 SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2562 DESCRIPTION ·With TO-220 package ·Complement to type 2SA1012 ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNIN SavantIC |
2SD2562 Silicon NPN Triple Diffused Planar Transistor Equivalent circuit C Darlington 2SD2562 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=150V VEB=5V IC=30mA VCE=4V, IC=10A IC=10A, IB=10mA IC=10A, IB=10mA VCE=12V, IE=–2A VCB=10V, f=1MHz 2SD2562 100max 100max 150min 5000min� ETC |
2SD2562 Silicon NPN Darlington Power Transistor INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2562 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 150V(Min) ·High DC Current Gain: hFE= 5000( Min.) @(IC= 10A, VCE= 4V) ·Low Collector Saturation Voltage: VCE(sat Inchange Semiconductor |
2SK2562-01R N-channel MOS-FET 2SK2562-01R FAP-II Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 800V 2,2Ω 7A 80W > Outline Drawing > Applications Switching Regulators UPS DC-DC conv Fuji Electric |
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