EEETG1V101P データシート PDFこの部品の機能は「Aluminum ElectrolytIC Capacitors」です。 |
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部品番号 |
EEETG1V101P Aluminum Electrolytic Capacitors Aluminum Electrolytic Capacitors/ TG Surface Mount Type Series: ● ● ● ● ● TG Type: V ■ Features Endurance:125 °C 1000 h to 2000 h Miniaturization (40 % less than TA Series) Low ESR (L Panasonic |
文字列「 EEETG1V101 」「 1V101P 」で始まる検索結果です。 |
部品説明 |
EEETG1V101UP Aluminum Electrolytic Capacitors Aluminum Electrolytic Capacitors/ TG Surface Mount Type Series: ● ● ● ● ● TG Type: V ■ Features Endurance:125 °C 1000 h to 2000 h Miniaturization (40 % less than TA Series) Low ESR (Low temp) Vibration-proof product is available upon request. (φ8 mm and larger) Panasonic |
11016 PRN110 CALIFORNIA MICRO DEVICES PRN100/110 Isolated Resistor Termination Network Features • Stable resistor network • High speed termination network • 8 or 12 terminating lines/package • Saves board space and reduces assembly cost Applications • Series California Micro Devices |
2SB1101 (2SB1101 / 2SB1102) LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR Hitachi Semiconductor |
2SB1101 SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1101 DESCRIPTION ·With TO-220 package ·Complement to type 2SD1601 ·DARLINGTON ·High DC current gain APPLICATIONS ·For low frequency power amplifier applications PINNING PIN SavantIC |
2SD1101 Silicon NPN Epitaxial 2SD1101 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SB831 Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SD1101 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to ba Hitachi Semiconductor |
2SD1101 Silicon NPN Epitaxial SMD Type Silicon NPN Epitaxial 2SD1101 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 Low Frequency amplifier. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute M Guangdong Kexin Industrial |
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