| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | EDS6416CHBH | 64M bits SDRAM DATA SHEET 64M bits SDRAM EDS6416AHBH, EDS6416CHBH (4M words × 16 bits) Description The EDS6416AHBH, EDS6416CHBH are 64M bits SDRAMs organized as 1,048,576 words × 16 bits × 4 banks. All inputs and outputs are synchronized with the positive edge of the clock. Supply voltages are 3.3V (EDS6416AHBH) and 2.5V (EDS6416CHBH). It is packaged in 60-ball FBGA. |
 Elpida Memory |
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Recommended search results related to EDS6416CHBH |
| Part No | Description ( Function) | Manufacturers | |
| EDS6416AHBH | 64M bits SDRAM DATA SHEET 64M bits SDRAM EDS6416AHBH, EDS6416CHBH (4M words × 16 bits) Description The EDS6416AHBH, EDS6416CHBH are 64M bits SDRAMs organized as 1,048,576 words × 16 bits × 4 banks. All inputs and outputs are synchronized with the positive edge of the clo |
Elpida Memory |
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| EDS6416AHTA | 64M bits SDRAM DATA SHEET 64M bits SDRAM EDS6416AHTA, EDS6416CHTA (4M words × 16 bits) Description The EDS6416AHTA, EDS6416CHTA are 64M bits SDRAMs organized as 1,048,576 words × 16 bits × 4 banks. All inputs and outputs are synchronized with the positive edge of the clo |
Elpida Memory |
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| EDS6416AHTA-TI | 64M bits SDRAM WTR PRELIMINARY DATA SHEET 64M bits SDRAM WTR (Wide Temperature Range) EDS6416AHTA-TI (4M words × 16 bits) Description The EDS6416AHTA is a 64M bits SDRAMs organized as 1,048,576 words × 16 bits × 4 banks. All inputs and outputs are synchronized with the positive edge of the www. |
Elpida Memory |
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| EDS6416CHTA | 64M bits SDRAM DATA SHEET 64M bits SDRAM EDS6416AHTA, EDS6416CHTA (4M words × 16 bits) Description The EDS6416AHTA, EDS6416CHTA are 64M bits SDRAMs organized as 1,048,576 words × 16 bits × 4 banks. All inputs and outputs are synchronized with the positive edge of the clo |
Elpida Memory |
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| 5264165FTT75 | HM5264165FTT75 HM5264165F-75/A60/B60 HM5264805F-75/A60/B60 HM5264405F-75/A60/B60 64M LVTTL interface SDRAM 133 MHz/100 MHz 1-Mword × 16-bit × 4-bank/2-Mword × 8-bit × 4-bank /4-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM ADE-203-940B (Z) Rev. 1.0 Nov. 10, 1999 Descr |
 Hitachi Semiconductor |
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| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
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| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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