Datasheet EDI8F81026C Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	EDI8F81026C	1Mx8 STATIC RAM CMOS White Electronic Designs 1Mx8 STATIC RAM CMOS, MODULE FEATURES 1Mx8 bit CMOS Static RAM • Access Times 20 through 35ns • TTL Compatible Inputs and Outputs • Fully Static, No Clocks High Density Packaging • JEDEC Aproved, Revolutionary Pinout • 36 Pin DIP, No. 179 Single	White Electronic Designs Corporation	cmos

EDI Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	EDI2AG272128V-D1	2 Megabyte Sync/Sync Burst White Electronic Designs EDI2AG272128V-D1 ADVANCED* 2 Megabyte Sync/Sync Burst, Small Outline DIMM FEATURES 2x128Kx72 Synchronous, Synchronous Burst Flow-Through Architecture Linear Burst Mode Clock Controlled Registered Bank Enables (E1#, E2#) Clock Controlled Byte Write Mode	White Electronic	data
2	EDI2AG272129V	2 Megabyte Sync/Sync Burst White Electronic Designs EDI2AG272129V ADVANCED* 2 Megabyte Sync/Sync Burst, Small Outline DIMM FEATURES 2x128Kx72 Synchronous, Synchronous Burst Flow-Through Architecture Sequential Burst MODE Clock Controlled Registered Bank Enables (E1#, E2#) Clock Controlled Byte Write Mod	White Electronic	data
3	EDI2CG272128V	Sync/Sync Burst SRAM SO-DIMM White Electronic Designs EDI2CG272128V ADVANCED* 2x128Kx72, 3.3V Sync/Sync Burst SRAM SO-DIMM FEATURES 2x128Kx72 Synchronous, Synchronous Burst Flow-Through Architecture Linear and Sequential Burst Support via MODE pin Access Speed(s): TKHQV = 8.5, 9, 12, 15ns Clock Controlled	White Electronic	ram
4	EDI2CG472128V	4 Megabyte Sync/Sync Burst White Electronic Designs 4 Megabyte Sync/Sync Burst, Dual Key DIMM FEATURES 4x128Kx72 Synchronous, Synchronous Burst Flow-Through Architecture Linear and Sequential Burst Support via MODE pin Clock Controlled Registered Module Enable (EM#) Clock Controlled Registered Bank Enable	White Electronic	data
5	EDI2CG472256V	8 Megabyte Sync/Sync Burst White Electronic Designs 8 Megabyte Sync/Sync Burst, Dual Key DIMM FEATURES 4x256Kx72 Synchronous, Synchronous Burst Flow-Through Architecture Linear and Sequential Burst Support via MODE pin Clock Controlled Registered Module Enable (EM#) Clock Controlled Registered Bank Enable	White Electronic	data
6	EDI2DL32256V	256Kx32 Synchronous Pipline Burst SRAM EDI2DL32256V 256Kx32 Synchronous Pipline Burst SRAM 3.3V FEATURES s tKHQV times of 3.5, 3.8 and 4.0ns s 166, 150 and 133 MHz clock speed s DSP Memory Solution • Texas Instruments’ TMS320C6201 • Texas Instruments’ TMS320C67x s Package: • 119 pin BGA, JEDEC MO-163 s 3.3	White Electronic	ram
7	EDI2GG464128V	4MB SYNCHRONOUS CARD EDGE DIMM White Electronic Designs 4MB SYNCHRONOUS CARD EDGE DIMM FEATURES 4x128Kx64 Synchronous Access Speed(s): TKHQV = 9.5, 10, 11, 12, 15ns Flow-Through Architecture Clock Controlled Registered Bank Enables (E1#, E2#, E3#, E4#) Clock Controlled Registered Address Clock Controlled Regi	White Electronic	data

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Número de pieza	Descripción	Fabricantes	PDF
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