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ECKR3F561KBP データシート PDF

この部品の機能は「CeramIC Disc Capacitors」です。


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部品番号
ECKR3F561KBP

Ceramic Disc Capacitors


Ceramic Disc Capacitors (High Voltage) /KBP High Voltage Ceramic Disc Capacitors Rated 1 to 3 kVDC, Temp. Char. Y5P Hi Volt, Disc, Radial Leaded KPB ECK-D (KPB) Series: KBP s Features • Wide opera


Panasonic Semiconductor
Panasonic Semiconductor

データシート pdf



文字列「 ECKR3F561 」「 3F561KBP 」で始まる検索結果です。

部品説明

2SC3561

N-Channel MOSFET Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3561 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V (Min) ·High Switching Speed APPLICATIONS ·Switching regulator and high voltage switching applications. ·High sp

Inchange Semiconductor
Inchange Semiconductor

 データシート pdf


2SK3561

Silicon N Channel MOS Type Field Effect Transistor

2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.5 S (typ.) • Low leakage current: IDSS = 100 μ

Toshiba
Toshiba

 データシート pdf


2SK3561

Silicon N Channel MOS Type Field Effect Transistor

2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.5 S (typ.) • Low leakage current: IDSS = 100 μ

Toshiba Semiconductor
Toshiba Semiconductor

 データシート pdf


2SK3561

Silicon N Channel MOS Type Field Effect Transistor

2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.5 S (typ.) • Low leakage current: IDSS = 100 μ

Toshiba Semiconductor
Toshiba Semiconductor

 データシート pdf


2SK3561

Silicon N Channel MOS Type Field Effect Transistor

2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.5 S (typ.) • Low leakage current: IDSS = 100 μ

Toshiba
Toshiba

 データシート pdf


2SK3561

Silicon N Channel MOS Type Field Effect Transistor

2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.5 S (typ.) • Low leakage current: IDSS = 100 μ

Toshiba Semiconductor
Toshiba Semiconductor

 データシート pdf

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