ECKR3F561KBP データシート PDFこの部品の機能は「CeramIC Disc Capacitors」です。 |
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部品番号 |
ECKR3F561KBP Ceramic Disc Capacitors Ceramic Disc Capacitors (High Voltage) /KBP High Voltage Ceramic Disc Capacitors Rated 1 to 3 kVDC, Temp. Char. Y5P Hi Volt, Disc, Radial Leaded KPB ECK-D (KPB) Series: KBP s Features • Wide opera Panasonic Semiconductor |
文字列「 ECKR3F561 」「 3F561KBP 」で始まる検索結果です。 |
部品説明 |
2SC3561 N-Channel MOSFET Transistor INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3561 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V (Min) ·High Switching Speed APPLICATIONS ·Switching regulator and high voltage switching applications. ·High sp Inchange Semiconductor |
2SK3561 Silicon N Channel MOS Type Field Effect Transistor 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.5 S (typ.) • Low leakage current: IDSS = 100 μ Toshiba |
2SK3561 Silicon N Channel MOS Type Field Effect Transistor 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.5 S (typ.) • Low leakage current: IDSS = 100 μ Toshiba Semiconductor |
2SK3561 Silicon N Channel MOS Type Field Effect Transistor 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.5 S (typ.) • Low leakage current: IDSS = 100 μ Toshiba Semiconductor |
2SK3561 Silicon N Channel MOS Type Field Effect Transistor 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.5 S (typ.) • Low leakage current: IDSS = 100 μ Toshiba |
2SK3561 Silicon N Channel MOS Type Field Effect Transistor 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.5 S (typ.) • Low leakage current: IDSS = 100 μ Toshiba Semiconductor |
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