E13007-2 データシート PDFこの部品の機能は「Spse13007-2」です。 |
検索結果を表示する |
部品番号 |
E13007-2 SPSE13007-2 www.Datasheet.jp ! ( !6 8>2210- ! "#$ # # % & # $$ % & $ $' #% # # $ / " 122 322 4 5 52 07.̚8.2 8.2 (( !) * +,-.ć # % # #0& $ #0 % # % #0& $ # "## # 6 $$ & # 9" % % # "# # "# $ San Pu |
文字列「 E130072 」「 13007 」で始まる検索結果です。 |
部品説明 |
13007 NPN Epitaxial Silicon Transistor 13007 NPN Epitaxial Silicon Transistor HIGH VOLTAGE SWITCH MODE APPLICATION Collector-Emitter Voltage: VCEO=400V Collector Dissipation: PC(max)=80W Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter- Elite |
13007A MJE13007A A A A A Mospec Semiconductor |
13007B TS13007B TS13007B High Voltage NPN Transistor TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO BVCBO IC VCE(SAT) 400V 700V 8A 3V @ IC / IB = 8A / 2A Features ● ● High Voltage High Speed Switching Block Diagram Structure ● ● Silicon Triple Diffused T TSC |
13007N ST13007N ® ST13007N ST13007NFP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s s s s s HIGH VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS s ELECTRONIC BALLASTS FOR FLUORE STMicroelectronics |
3DD13007 TRANSISTOR JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13007 TRANSISTOR£¨NPN £© TO¡ª 220 FEATURES Power dissipation PCM : 2 W£¨ Tamb=25¡æ£© Collector current ICM: 8 A Collector-base voltage V(BR)CBO : 700 V Jiangsu Changjiang Electronics |
3DD13007 Plastic-Encapsulated Transistors Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors 3DD13007 FEATURES Power dissipation PCM: 2 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3. EMITTER TRANSISTOR (NPN) TO-220 aSheet4U.com Collector current 8 A ICM: Collector-base voltage 700 V V(BR)CBO: Operating TRANSYS Electronics |
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