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Datasheet DU28120T Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | DU28120T | RF MOSFET Power Transistor/ 12OW/ 28V 2 - 175 MHz E XF
.-----r =
an AMP company
RF MOSFET Power Transistor, 2 - 175 MHz
Features
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices
12OW, 28V
DU28120T
Absolute Maximum Ratings at 25°C
Par |  Tyco Electronics | mosfet |
DU2 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | DU2702 | 100V high precision step-down LED constant current driver 特点
输入电压范围10~100V 内置Rdon<1Ω N通道MOSFET TRUEC2闭环恒流控制技术 ±3%系统恒流精度 PWM/模拟调光 采样电阻开路、短路保护 输出过流、短路保护 主电感短路保护 过温保护 SOP8封装
应用
LED 路灯�  Duty-Cycle Semiconductor led | | |
| 2 | DU2805S | RF MOSFET Power Transistor/ 5W/ 28V 2 - 175 MHz e
an AMP company
ec== :--=s .-= = == = -r--= =z r =
RF MOSFET 2 - 175 MHz
Features
l l l l l
Power
Transistor,
5W, 28V
DU2805S
v2.00
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Koise Figure Than Bipolar Devices
Tyco Electronics mosfet | | |
| 3 | DU2810 | RF MOSFET Power Transistor/ lOW/ 28V 2 - 175 MHz XF r an AMP company
=
RF MOSFET 2 - 175 MHz
Features
l l l l l
Power
Transistor,
lOW, 28V
DU2810S
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Low Noise Floor
Absolute Maximum Ratinas at 25°C
( Parameter 1 Drain-Sourc Tyco Electronics mosfet | | |
| 4 | DU2810S | RF MOSFET Power Transistor/ lOW/ 28V 2 - 175 MHz XF r an AMP company
=
RF MOSFET 2 - 175 MHz
Features
l l l l l
Power
Transistor,
lOW, 28V
DU2810S
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Low Noise Floor
Absolute Maximum Ratinas at 25°C
( Parameter 1 Drain-Sourc Tyco Electronics mosfet | | |
| 5 | DU28120T | RF MOSFET Power Transistor/ 12OW/ 28V 2 - 175 MHz E XF
.-----r =
an AMP company
RF MOSFET Power Transistor, 2 - 175 MHz
Features
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices
12OW, 28V
DU28120T
Absolute Maximum Ratings at 25°C
Par Tyco Electronics mosfet | | |
| 6 | DU28120V | RF MOSFET POWER TRANSISTOR 120W 28V 2-175 MHZ RF MOSFET Power Transistor, 12OW, 28V 2 - 175 MHz
Features
l l l l l
DU2812OV
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices
..
Absolute Maximum Ratings at 25°C
Electrical Chara  ETC mosfet | | |
| 7 | DU2812OV | RF MOSFET Power Transistor/ 12OW/ 28V 2 - 175 MHz RF MOSFET Power Transistor, 12OW, 28V 2 - 175 MHz
Features
l l l l l
DU2812OV
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices
..
Absolute Maximum Ratings at 25°C
Electrical Chara Tyco Electronics mosfet | |
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