Datasheet DSR05S30CTB Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	DSR05S30CTB	Silicon Epitaxial Schottky Barrier Type Diode DSR05S30CTB TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSR05S30CTB High Speed Switching Application Unit: mm 0.25±0.02 0.65±0.02 Absolute Maximum Ratings (Ta = 25°C) 0.7±0.02 1.2±0.05 CATHODE MARK Characteristic Symbol Rating Unit Reverse voltage Average forward current S	Toshiba Semiconductor

DSR05S30 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
DSR05S30U	Silicon Epitaxial Schottky Barrier Type Diode TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSR05S30U DSR05S30U High Speed Switching Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Reverse voltage Average forward current Surge current (10ms) Junction temperature	Toshiba Semiconductor
DSR05S30CTB	Silicon Epitaxial Schottky Barrier Type Diode DSR05S30CTB TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSR05S30CTB High Speed Switching Application Unit: mm 0.25±0.02 0.65±0.02 Absolute Maximum Ratings (Ta = 25°C) 0.7±0.02 1.2±0.05 CATHODE MARK Characteristic Symbol Rating Unit Reverse voltage Avera	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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