|
|
Datasheet DSR01S30SL Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | DSR01S30SL | Schottky Barrier Diode Schottky Barrier Diode Silicon Epitaxial
DSR01S30SL
1. Applications
• High-Speed Switching
2. Features
(1) Low reverse current: IR = 0.7 µA (max) @ VR = 30 V
3. Packaging and Internal Circuit
DSR01S30SL
1: Cathode 2: Anode
SL2
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta |
Toshiba |
DSR01S3 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
DSR01S30SL | Schottky Barrier Diode |
Toshiba |
|
DSR01S30SC | Silicon Epitaxial Schottky Barrier Type Diode |
Toshiba Semiconductor |
Esta página es del resultado de búsqueda del DSR01S30SL. Si pulsa el resultado de búsqueda de DSR01S30SL se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |