Datasheet DSR01S30SC Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	DSR01S30SC	Silicon Epitaxial Schottky Barrier Type Diode DSR01S30SC TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSR01S30SC ○ High-Speed Switching Application Unit: mm 0.1 9±0.02 Absolute Maximum Ratings (Ta = 25°C) ２ 0.025±0.015 0.62 ±0.03 0.3 8 Characteristic Symbol Rating Unit Reverse voltage Average forward current Surge c	Toshiba Semiconductor

DSR01S3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
DSR01S30SL	Schottky Barrier Diode Schottky Barrier Diode Silicon Epitaxial DSR01S30SL 1. Applications • High-Speed Switching 2. Features (1) Low reverse current: IR = 0.7 µA (max) @ VR = 30 V 3. Packaging and Internal Circuit DSR01S30SL 1: Cathode 2: Anode SL2 4. Absolute Maximum Ratings (Note) (Unless oth	Toshiba
DSR01S30SC	Silicon Epitaxial Schottky Barrier Type Diode DSR01S30SC TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSR01S30SC ○ High-Speed Switching Application Unit: mm 0.1 9±0.02 Absolute Maximum Ratings (Ta = 25°C) ２ 0.025±0.015 0.62 ±0.03 0.3 8 Characteristic Symbol Rating Unit Reverse voltage Average for	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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