DSEI60-12A データシート PDFこの部品の機能は「Fast Recovery Epitaxial Diode」です。 |
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部品番号 |
DSEI60-12A Fast Recovery Epitaxial Diode Fast Recovery Epitaxial Diode (FRED) DSEI 60 IFAVM = 52 A VRRM = 1200 V trr = 40 ns VRSM V 1200 VRRM V 1200 Type DSEI 60-12A TO-247 AD AC C A A = Anode, C = Cathode C Symbol IFRMS IFAVM ÿÿx IXYS |
DSEI60-12A SwitchMode Single Fast Recovery Epitaxial Diode DSEI60-12A ® DSEI60-12A Pb Pb Free Plating Product 60 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode APPLICATION · Freewheeling, Snubber, Clamp · Inversion Welder · PFC · Thinki Semiconductor |
文字列「 DSEI6012 」「 60 」で始まる検索結果です。 |
部品説明 |
01N60P AP01N60P AP01N60P Pb Free Plating Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp. ▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant G D S BVDSS RDS(ON) ID TO-22 Advanced Power Electronics |
0230600L Silicon Controlled Rectifier Microsemi Corporation |
0230600L Silicon Controlled Rectifier Microsemi Corporation |
02N60P SSM02N60P SSM02N60P N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Repetitive-avalanche rated Fast-switching Simple drive requirement G D BV DSS RDS(ON) ID TO-220 600V 8Ω 2A Description S The TO-220 package is widely preferred for commercial and industrial applications. ETC |
02N60S5 SPN02N60S5 SPN02N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated • Ultra VDS RDS(on) ID 600 3 0.4 SOT-223 4 V Ω A low effective capacitances • Improved transconductance 2 Infineon Technologies |
03N60C3 SPP03N60C3 / SPD03N60C3 / SPA03N60C3 Final data SPP03N60C3, SPB03N60C3 SPA03N60C3 VDS @ Tjmax RDS(on) ID 650 1.4 3.2 V Ω A Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme P-TO220-3-31 P-TO2 Infineon Technologies |
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