DSEI60-10A データシート PDFこの部品の機能は「Fast Recovery Epitaxial Diode」です。 |
検索結果を表示する |
部品番号 |
DSEI60-10A Fast Recovery Epitaxial Diode Fast Recovery Epitaxial Diode (FRED) DSEI 60 IFAVM = 60 A VRRM = 1000 V trr = 35 ns VRSM V 1000 VRRM V 1000 Type DSEI 60-10A TO-247 AD AC C A A = Anode, C = Cathode C Symbol IFRMS IFAVM ÿÿx IXYS |
文字列「 DSEI6010 」「 60 」で始まる検索結果です。 |
部品説明 |
01N60P AP01N60P AP01N60P Pb Free Plating Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp. ▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant G D S BVDSS RDS(ON) ID TO-22 Advanced Power Electronics |
0230600L Silicon Controlled Rectifier Microsemi Corporation |
0230600L Silicon Controlled Rectifier Microsemi Corporation |
02N60P SSM02N60P SSM02N60P N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Repetitive-avalanche rated Fast-switching Simple drive requirement G D BV DSS RDS(ON) ID TO-220 600V 8Ω 2A Description S The TO-220 package is widely preferred for commercial and industrial applications. ETC |
02N60S5 SPN02N60S5 SPN02N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated • Ultra VDS RDS(on) ID 600 3 0.4 SOT-223 4 V Ω A low effective capacitances • Improved transconductance 2 Infineon Technologies |
03N60C3 SPP03N60C3 / SPD03N60C3 / SPA03N60C3 Final data SPP03N60C3, SPB03N60C3 SPA03N60C3 VDS @ Tjmax RDS(on) ID 650 1.4 3.2 V Ω A Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme P-TO220-3-31 P-TO2 Infineon Technologies |
当社のサイトでは、半導体やセンサーからモーター、電源に至るまで、さまざまな製品のデータシートを簡単に検索してダウンロードできる集中型プラットフォームを提供しています。 |