DS6257A データシート PDFこの部品の機能は「Step-down Converter」です。 |
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部品番号 |
DS6257A Step-Down Converter ® RT6257A/B 6A, 18V, 500kHz, ACOTTM Step-Down Converter General Description Features The RT6257A/B is a high-efficiency, monolithic 4.5V to 18V Input Voltage Range synchronous step-down DC-D Richtek |
文字列「 DS6257 」「 6257A 」で始まる検索結果です。 |
部品説明 |
DS6257B Step-Down Converter ® RT6257A/B 6A, 18V, 500kHz, ACOTTM Step-Down Converter General Description Features The RT6257A/B is a high-efficiency, monolithic 4.5V to 18V Input Voltage Range synchronous step-down DC-DC converter that can deliver 6A Output Current up to 6A output current from Richtek |
2N6257 Bipolar NPN Device ( DataSheet : ) 2N6257 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) Semelab Plc |
2N6257 Silicon Power Transistor SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6257 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·Designed for audio amplifier and switching circuits applicat SavantIC |
2N6257 Bipolar NPN Device 2N6257 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675 Seme LAB |
41C16257 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE IS41C16257 IS41LV16257 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE FEATURES • • • • • • Fast access and cycle time TTL compatible inputs and outputs Refresh Interval: 512 cycles/8 ms Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden JEDEC standard pinout Integrated Silicon Solution Inc |
CG6257AM 4Mb (256K x 16) Pseudo Static RAM PRELIMINARY CG6257AM 4Mb (256K x 16) Pseudo Static RAM Features • Wide voltage range: 2.70V–3.30V • Access Time: 70ns • Ultra-low active power — Typical active current: 2.0mA @ f = 1 MHz • • • • — Typical active current: 13mA @ f = fmax Ultra low standby pow Weida Semiconductor |
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