DS3679 データシート PDFこの部品の機能は「Hex Tri-statee Ttl To Mos Drivers」です。 |
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部品番号 |
DS3679 Hex TRI-STATEE TTL to MOS Drivers DS1649 DS3649 DS1679 DS3679 Hex TRI-STATE TTL to MOS Drivers March 1986 DS1649 DS3649 DS1679 DS3679 Hex TRI-STATE TTL to MOS Drivers General Description The DS1649 DS3649 and DS1679 DS3679 are Hex T National Semiconductor |
DS3679 DS1649 DS3649 DS1679 DS3679 Hex TRI-STATE(RM) TTL to MOS Drivers (Rev. A) Texas Instruments |
文字列「 DS3679 」「 3679 」で始まる検索結果です。 |
部品説明 |
1N3679B (1N3675B - 1N3710B) Zener Diode 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 JEDEC DO-41 Case DataShee datasheet.jpom datasheet.jpom datasheet.jpom DataSheet 4 U .com et4U.com datasheet.jpom Central datasheet.jpom T Central Semiconductor |
2SC3679 Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose) 2SC3679 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3679 900 800 7 5(Pulse10) 2.5 100(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C Application : Switching Sanken electric |
2SC3679 SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3679 DESCRIPTION ·With TO-3PN package ·High voltage switching transistor APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collecto SavantIC |
2SC3679 Silicon NPN Power Transistors Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3679 DESCRIPTION ¡¤With TO-3PN package ¡¤High voltage switching transistor APPLICATIONS ¡¤For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to Inchange Semiconductor |
2SC3679B Silicon NPN triple diffusion planar transistor(High voltage switching transistor) SEMICONDUCTOR 2SC3679B Silicon NPN triple diffusion planar transistor (High voltage switching transistor) 5A/800V/100W RoHS RoHS Nell High Power Products 9 67 J C3 30 2S 12 2.0 19.9±0.3 4.0 TO-3P(B) 20.0 min 4.0 max 3 2 1.8 15.6±0.4 9.6 5 . 0 ±0 . 2 4.8±0.2 2.0± NELL SEMICONDUCTOR |
2SK3679 Fuji Power MOSFET SuperFAP-G series Target Specification 2SK3679-01MR (900V/1.58Ω/9A) 1) Package Items Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode recovery dV Fuji Electric |
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