DS3651N データシート PDFこの部品の機能は「Quad High Speed Mos Sense Amplifiers」です。 |
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部品番号 |
DS3651N Quad High Speed MOS Sense Amplifiers DS1651/DS3651 Quad High Speed MOS Sense Amplifiers June 1999 DS1651/DS3651 Quad High Speed MOS Sense Amplifiers General Description The DS1651/DS3651 is TTL compatible high speed circuits intended f National Semiconductor |
文字列「 DS3651 」「 3651N 」で始まる検索結果です。 |
部品説明 |
DS3651 DS1651/DS3651 Quad High Speed MOS Sense Amplifiers Texas Instruments |
DS3651J Quad High Speed MOS Sense Amplifiers DS1651/DS3651 Quad High Speed MOS Sense Amplifiers June 1999 DS1651/DS3651 Quad High Speed MOS Sense Amplifiers General Description The DS1651/DS3651 is TTL compatible high speed circuits intended for sensing in a broad range of MOS memory system applications. Switching speeds National Semiconductor |
2N3651 Thyristor SCR 200V 200A 3-Pin(2+Tab) TO-3 Sleeve New Jersey Semiconductor |
2SC3651 NPN Epitaxial Planar Silicon Transistor Ordering number:EN1779A NPN Epitaxial Planar Silicon Transistor 2SC3651 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications · LF amplifiers, various drivers, muting circuit. Features · High DC current gain (hFE=500 to 2000). · High breakdown voltage ( Sanyo Semicon Device |
2SC3651 Transistor SMD Type Transistors NPN Epitaxial Planar Silicon Transistors 2SC3651 Features High DC current gain High breakdown voltage Low colleotor-to- emitter saturation voltage High VEBO (VEBO 15V) Very small size making it easy to provide high-density small-sized hybrid IC's. Absolut Kexin |
2SK3651-01R N-CHANNEL SILICON POWER MOSFET 2SK3651-01R FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Applications Switching regulators UPS (Uninterrupt Fuji Electric |
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