DS21Q44TN データシート PDFこの部品の機能は「Enhanced Quad E1 Framer」です。 |
検索結果を表示する |
部品番号 |
DS21Q44TN Enhanced QUAD E1 FRAMER DS21Q44 Enhanced QUAD E1 FRAMER www.dalsemi.com FEATURES Four E1 (CEPT or PCM-30) /ISDN-PRI framing transceivers All four framers are fully independent; transmit and receive sections of each framer a Dallas Semiconducotr |
文字列「 DS21Q44 」「 21Q44TN 」で始まる検索結果です。 |
部品説明 |
DS21Q44 Enhanced QUAD E1 FRAMER DS21Q44 Enhanced QUAD E1 FRAMER www.dalsemi.com FEATURES Four E1 (CEPT or PCM-30) /ISDN-PRI framing transceivers All four framers are fully independent; transmit and receive sections of each framer are fully independent Frames to FAS, CAS, CCS, and CRC4 formats Each of the four Dallas Semiconducotr |
DS21Q44T Enhanced QUAD E1 FRAMER DS21Q44 Enhanced QUAD E1 FRAMER www.dalsemi.com FEATURES Four E1 (CEPT or PCM-30) /ISDN-PRI framing transceivers All four framers are fully independent; transmit and receive sections of each framer are fully independent Frames to FAS, CAS, CCS, and CRC4 formats Each of the four Dallas Semiconducotr |
2SD2144 High-current Gain MediumPower Transistor (20V/ 0.5A) Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S FFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) FStructure Epitaxial plana ROHM Semiconductor |
2SD2144S High-current Gain MediumPower Transistor (20V/ 0.5A) Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S FFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) FStructure Epitaxial plana ROHM Semiconductor |
2SK2144 Silicon N-Channel MOS FET 2SK2144 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter Outline TO-220CFM D G 12 3 1. Gate 2. Dra Hitachi Semiconductor |
2SK2144 N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed APPLICATIONS ·Switching regulators ,DC-DC converter,Motor Control isc Product Specification 2SK2144 ABSOLUTE Inchange Semiconductor |
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