DS1667 データシート PDFこの部品の機能は「Digital Resistor With Op Amp」です。 |
検索結果を表示する |
部品番号 |
DS1667 Digital Resistor with OP AMP DS1667 Digital Resistor with OP AMP www.dalsemi.com FEATURES Two digitally controlled 256-position potentiometers Serial port provides means for setting and reading both potentiometers Resistors can Dallas Semiconducotr |
文字列「 DS1667 」「 1667 」で始まる検索結果です。 |
部品説明 |
2SA1667 Silicon PNP Epitaxial Planar Transistor(TV Vertical Output/ Audio Output Driver and General Purpose) 2SA1667/1668 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4381/4382) sAbsolute maximum ratings (Ta=25°C) Symbol 2SA1667 VCBO VCEO VEBO IC IB PC Tj Tstg –150 –150 –6 –2 –1 25(Tc=25°C) 150 –55 to +150 2SA1668 –200 –200 Unit V V V A A W °C °C IE Sanken electric |
2SA1667 Silicon PNP Epitaxial Planar Transistor(TV Vertical Output/ Audio Output Driver and General Purpose) 2SA1667/1668 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4381/4382) sAbsolute maximum ratings (Ta=25°C) Symbol 2SA1667 VCBO VCEO VEBO IC IB PC Tj Tstg –150 –150 –6 –2 –1 25(Tc=25°C) 150 –55 to +150 2SA1668 –200 –200 Unit V V V A A W °C °C IE ETC |
2SA1667 (2SA1667 / 2SA1668) SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1667 2SA1668 DESCRIPTION ·With TO-220F package ·Complement to type 2SC4381/4382 APPLICATIONS ·For TV vertical output ,audio output driver and general purpose applications PINN SavantIC |
2SA1667 POWER TRANSISTOR www.DataSheet4U.net INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1667 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -150V(Min) ·DC Current Gain: hFE= 60(Min)@ (VCE= -10V, IC= -0.7A) ·Complement to Type 2SC4381 APPLICA Inchange Semiconductor |
2SB1667 SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1667(SM) 2SB1667(SM) Audio Frequency Power Amplifier Applications Unit: mm • Low saturation voltage: VCE (sat) = −1.7 V (max) (IC = −3 A, IB = −0.3 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbo Toshiba Semiconductor |
2SB1667 Silicon PNP Triple Diffused Type SMD Type Silicon PNP Triple Diffused Type 2SB1667 TO-252 +0.15 1.50 -0.15 Transistors Features Low collector saturation voltage. Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 Guangdong Kexin Industrial |
当社のサイトでは、半導体やセンサーからモーター、電源に至るまで、さまざまな製品のデータシートを簡単に検索してダウンロードできる集中型プラットフォームを提供しています。 |