DS1338Z-33 データシート PDFこの部品の機能は「I2c Rtc」です。 |
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部品番号 |
DS1338Z-33 I2C RTC 19-6019; Rev 3/12 DS1338 I C RTC with 56-Byte NV RAM 2 GENERAL DESCRIPTION The DS1338 serial real-time clock (RTC) is a lowpower, full binary-coded decimal (BCD) clock/calendar plus 56 bytes of NV S Maxim Integrated |
文字列「 DS1338Z33 」「 1338Z 」で始まる検索結果です。 |
部品説明 |
2SA1338 PNP/NPN Epitaxial Planar Silicon Transistors Ordering number:EN1421A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1338/2SC3392 High-Speed Switching Applications Features · Adoption of FBET process. · High breakdown voltage : VCEO=(–)50V. · Large current capacitiy and high fT. · Very small-sized package permitting Sanyo Semicon Device |
2SA1338 PNP Epitaxial Planar Silicon Transistors SMD Type Transistors IC PNP Epitaxial Planar Silicon Transistors 2SA1338 SOT-23 Unit: mm Adoption of FBET process. +0.1 2.4-0.1 High breakdown voltage : VCEO=-50V. Large current capacitiy and high fT. Ultrasmall-sized package permitting sets to be smallsized, slim. +0.1 1.3-0 Kexin |
2SA1338 Transistors Product specification 2SA1338 SOT-23 Unit: mm Adoption of FBET process. +0.1 2.4-0.1 High breakdown voltage : VCEO=-50V. Large current capacitiy and high fT. Ultrasmall-sized package permitting sets to be smallsized, slim. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 TY Semiconductor |
2SD1338 Silicon NPN Transistor INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1338 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for horizontal output applications. ABSOLUTE MAXIMUM RATI Inchange Semiconductor |
2SK1338 Silicon N-Channel MOS FET 2SK1338 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220AB D G 1 2 3 1. Gate 2. Hitachi Semiconductor |
A1338 PNP Transistor - 2SA1338 Ordering number:EN1421A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1338/2SC3392 High-Speed Switching Applications Features · Adoption of FBET process. · High breakdown voltage : VCEO=(–)50V. · Large current capacitiy and high fT. · Very small-sized package permitting Sanyo |
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