DS1259 データシート PDFこの部品の機能は「Battery Manager Chip」です。 |
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部品番号 |
DS1259 Battery Manager Chip www.Datasheet.jp DS1259 Battery Manager Chip www.dalsemi.com FEATURES Facilitates uninterruptible power Uses battery only when primary VCC is not available Low forward voltage drop Power fail sig Dallas Semiconducotr |
文字列「 DS1259 」「 1259 」で始まる検索結果です。 |
部品説明 |
2N1259 Small Signal Transistors Small Signal Transistors TO-39 Case TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ (µA) *ICEO **ICES ***ICEV ****ICER MIN 6.0 6.0 5.0 5.0 7.0 7.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 5.0 6.0 5.0 5.0 5.0 6.0 6.0 6.0 6.0 6.0 5.0 5.0 5.0 7.0 6.0 4.5 6.0 7.0 7.0 6.0 6.0 7.0 ETC |
2SA1259 PNP/NPN Epitaxial Planar Silicon Darlington Transistors Ordering number:ENN1059D PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SA1259/2SC3145 60V/5A for High-Speed Drivers Applications Features · High fT. · High switching speed. · Wide ASO. Package Dimensions unit:mm 2010C [2SA1259/2SC3145] 10.2 3.6 5.1 4.5 1.3 Sanyo Semicon Device |
2SA1259 Silicon PNP Power Transistors INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= -2.5A ·Low Collector-Emitter Saturation Voltage : VCE(sat) = -1.5V(Max)@ IC= -2.5A ·Complement to Type 2SC3145 isc Product Specification 2SA1259 APPLI Inchange Semiconductor |
2SB1259 Silicon PNP Epitaxial Planar Transistor(Driver for Solenoid/ Relay and Motor and General Purpose) (3 k Ω)(1 0 0 Ω) E Darlington sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1259 –120 –120 –6 –10(Pulse–15) –1 30(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C 2SB1259 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO Sanken electric |
2SD1259 Silicon NPN triple diffusion planar type Power Transistors 2SD1259, 2SD1259A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio 10.0±0.3 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q q High foward current transfer ratio hFE Satisfactory linearity Panasonic Semiconductor |
2SD1259 Silicon NPN Triple Diffusion Planar Type SMD Type Transistors Silicon NPN Triple Diffusion Planar Type 2SD1259;2SD1259A TO-252 +0.15 1.50 -0.15 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.15 6.50-0.15 +0.2 5.30-0.2 Features Satisfactory linearity of forward current transfer ratio hFE. +0.2 9.70 -0.2 +0.1 0.80-0.1 +0. Kexin |
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