DS1230W データシート PDFこの部品の機能は「3.3v 256k Nonvolatile Sram」です。 |
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部品番号 |
DS1230W 3.3V 256k Nonvolatile SRAM DS1230W 3.3V 256k Nonvolatile SRAM www.dalsemi.com FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatil Dallas |
文字列「 DS1230 」「 1230W 」で始まる検索結果です。 |
部品説明 |
DS1230AB 256k Nonvolatile SRAM 19-5635; Rev 11/10 www.maxim-ic.com DS1230Y/AB 256k Nonvolatile SRAM FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimit Dallas |
DS1230Y 256k Nonvolatile SRAM 19-5635; Rev 11/10 www.maxim-ic.com DS1230Y/AB 256k Nonvolatile SRAM FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimit Dallas |
2SB1230 PNP / NPN Epitaxial Planar Silicon Transistors Ordering number : EN3259A 2SB1230 / 2SD1840 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB1230 / 2SD1840 High-Current Switching Applications Applications • Motor drivers, relay drivers, converters and other general high-current switching a Sanyo Semicon Device |
2SB1230 SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·Wide area of safe operation ·Complement to type 2SD1840 ·Low collector saturation voltage APPLICATIONS ·Motor drivers,relay drivers,converters a SavantIC |
2SD1230 PNP/NPN Epitaxial Planar Silicon Darlington Transistors Ordering number:1034B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB913/2SD1230 Driver Applications Applications · Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. Features · High DC current gain. · High current capacity and wide Sanyo Semicon Device |
2SD1230 Silicon NPN Darlington Power Transistor INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD1230 DESCRIPTION ·High DC Current Gain : hFE= 1500(Min.)@ IC= 4A, VCE= 3V ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) ·Complement to Type 2SB913 APPLICATIONS · INCHANGE |
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