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Datasheet DR292 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | DR292 | Diode, Rectifier |  American Microsemiconductor | diode |
DR2 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | DR200 | SILICON RECTIFIER DIODES
DR200 - DR210
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free
SILICON RECTIFIER DIODES
D2
0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN.  EIC discrete Semiconductors rectifier | | |
| 2 | DR200G | GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
DR200G - DR210G
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS D2
0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN.
0. EIC discrete Semiconductors rectifier | | |
| 3 | DR201 | SILICON RECTIFIER DIODES
DR200 - DR210
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free
SILICON RECTIFIER DIODES
D2
0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN. EIC discrete Semiconductors rectifier | | |
| 4 | DR201G | GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
DR200G - DR210G
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS D2
0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN.
0. EIC discrete Semiconductors rectifier | | |
| 5 | DR202 | SILICON RECTIFIER DIODES
DR200 - DR210
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free
SILICON RECTIFIER DIODES
D2
0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN. EIC discrete Semiconductors rectifier | | |
| 6 | DR202G | GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
DR200G - DR210G
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS D2
0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN.
0. EIC discrete Semiconductors rectifier | | |
| 7 | DR204 | SILICON RECTIFIER DIODES
DR200 - DR210
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free
SILICON RECTIFIER DIODES
D2
0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN. EIC discrete Semiconductors rectifier | |
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