DPG30C300PC データシート PDFこの部品の機能は「High Performance Fast Recovery Diode」です。 |
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部品番号 |
DPG30C300PC High Performance Fast Recovery Diode HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPG30C300PC 1 43 DPG30C300PC VRRM I FAV t rr = 300 V = 2x 15 A = 35 ns Backside: cathode Fea IXYS |
文字列「 DPG30C300 」「 30C300PC 」で始まる検索結果です。 |
部品説明 |
DPG30C300HB High Performance Fast Recovery Diode HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPG30C300HB 1 23 DPG30C300HB VRRM I FAV t rr = 300 V = 2x 15 A = 35 ns Backside: cathode Features / Advantages: ● Planar passivated chips ● Very low leakage current � IXYS |
DPG30C300PB High Performance Fast Recovery Diode HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPG30C300PB 1 23 DPG30C300PB VRRM I FAV t rr = 300 V = 2x 15 A = 35 ns Backside: cathode Features / Advantages: ● Planar passivated chips ● Very low leakage current � IXYS |
0230300L Silicon Controlled Rectifier Microsemi Corporation |
0230300L Silicon Controlled Rectifier Microsemi Corporation |
5SNA1500E330300 IGBT Module VCE = IC = 3300 V 1500 A ABB HiPakTM IGBT Module 5SNA 1500E330300 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power cycling capability • AlN substr ABB |
HM31-30300 Encapsulated Current Sense Transformers MODEL HM31 SERIES Encapsulated Current Sense Transformers FEATURES AND BENEFITS • • • • • Complies with VDE safety agency requirements Excellent temperature characteristics Encapsulating technique used to ensure long term reliability Excellent linearity (current vs. ETC |
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