Datasheet DMT6016LFDF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	DMT6016LFDF	N-CHANNEL ENHANCEMENT MODE MOSFET NAEDWVAPNRCOED IUNCFTORMATION Product Summary V(BR)DSS 60V RDS(ON) max 16mΩ @ VGS = 10V 27mΩ @ VGS = 4.5V ID max TA = +25°C 8.9A 6.8A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, makin	Diodes

DMT6016L Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
DMT6016LPS	N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INFORMATION DMT6016LPS 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary V(BR)DSS 60V RDS(ON) 15mΩ @ VGS = 10V 24mΩ @ VGS = 4.5V ID TC = +25°C 32 A 24 A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintai	Diodes
DMT6016LSS	N-CHANNEL ENHANCEMENT MODE MOSFET A DAVDAVNACNECDEI INNNEFFOWORRPMRMAOATDIT IUOOCNNT DMT6016LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 60V RDS(ON) max 18mΩ @ VGS = 10V 28mΩ @ VGS = 4.5V ID max TA = +25°C 9.2 A 7.5 A Features and Benefits • Low On-Resistance • Low Input Capac	Diodes
DMT6016LFDF	N-CHANNEL ENHANCEMENT MODE MOSFET NAEDWVAPNRCOED IUNCFTORMATION Product Summary V(BR)DSS 60V RDS(ON) max 16mΩ @ VGS = 10V 27mΩ @ VGS = 4.5V ID max TA = +25°C 8.9A 6.8A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switchin	Diodes

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Número de pieza	Descripción	Fabricantes	PDF
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