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Datasheet DMP2160U Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | DMP2160U | P-CHANNEL ENHANCEMENT MODE MOSFET DMP2160U
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS -20V
RDS(ON) max 75mΩ @ VGS = -4.5V 140mΩ @ VGS = -1.8V
ID max TA = +25°C
-3.3A
-2.4A
Features and Benefits
Low On-Resistance Very Low Gate Threshold Voltage VGS(th) ≤ 1V Low Input Capacitance Fast Switch |
 Diodes |
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| 4 | DMP2160UFDB | DUAL P-CHANNEL ENHANCEMENT MODE MOSFET DMP2160UFDB
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
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Features
• Low On-Resistance • 70mΩ @VGS = -4.5V • 85mΩ @VGS = -2.5V • 86mΩ (typ) @VGS = -1.8V Low Gate Threshold Voltage, -0.9V Max Fast Switching Speed Low Input/Output Leaka |
Diodes |
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| 3 | DMP2160UFDBQ | DUAL P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT
Product Summary
V(BR)DSS -20V
RDS(ON) max
70mΩ @ VGS = -4.5V 85mΩ @ VGS = -2.5V
ID MAX TA = +25°C
-3.8A -3.3A
Description
This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency p |
Diodes |
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| 2 | DMP2160UW | P-CHANNEL ENHANCEMENT MODE MOSFET DMP2160UW
P-CHANNEL ENHANCEMENT MODE MOSFET
Please click here to visit our online spice models database.
Features
• Low On-Resistance • 100 mΩ @ VGS = -4.5V • 120 mΩ @ VGS = -2.5V • 160 mΩ @ VGS = -1.8V Very Low Gate Threshold Voltage VGS(th) ≤ 1V Low Input Capacitance Fast Switching S |
Diodes |
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