DMP2123L データシート PDFこの部品の機能は「P-channel Enhancement Mode Field Effect Transistor」です。 |
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部品番号 |
DMP2123L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DMP2123L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • Low RDS(ON): • 72 mΩ @VGS = -4.5V • 108 mΩ @VGS = -2.7V � Diodes |
DMP2123L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product specification DMP2123L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low RDS(ON): • 72 mΩ @VGS = -4.5V • 108 mΩ @VGS = -2.7V • 123 mΩ @VGS = -2.5V Low Input/Output TY Semiconductor |
文字列「 DMP2123 」「 2123L 」で始まる検索結果です。 |
部品説明 |
DMP2123LQ P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT DMP2123LQ P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Low RDS(ON) - 72mΩ @VGS = -4.5V - 108mΩ @VGS = -2.7V - 123mΩ @VGS = -2.5V Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Diodes |
2SC2123 SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2123 DESCRIPTION ·With TO-3 package ·Short switching times. ·High dielectric strength. APPLICATIONS ·For use in TV horizontal deflection stage PINNING(see fig.2) PIN 1 2 3 Ba SavantIC |
2SD2123 Silicon NPN Epitaxial 2SD2122(L)/(S), 2SD2123(L)/(S) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector 3. Emitter 4. Collector L Type 2SD2122(L)/(S), 2SD2123(L)/(S) Absolute Maximum Hitachi Semiconductor |
2SD2123L Silicon NPN Epitaxial 2SD2122(L)/(S), 2SD2123(L)/(S) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector 3. Emitter 4. Collector L Type 2SD2122(L)/(S), 2SD2123(L)/(S) Absolute Maximum Hitachi Semiconductor |
2SD2123S Silicon NPN Epitaxial 2SD2122(L)/(S), 2SD2123(L)/(S) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector 3. Emitter 4. Collector L Type 2SD2122(L)/(S), 2SD2123(L)/(S) Absolute Maximum Hitachi Semiconductor |
2SK2123 Silicon N-Channel Power F-MOS FET Power F-MOS FETs 2SK2123 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 100mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Applications 4.1±0.2 Panasonic Semiconductor |
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