DMNH4015SSD データシート PDFこの部品の機能は「Dual N-channel Enhancement Mode Mosfet」です。 |
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部品番号 |
DMNH4015SSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET DMNH4015SSD 40V +175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 40V RDS(ON) Max 15mΩ @ VGS = 10V 20mΩ @ VGS = 4.5V ID TA = +25°C 8.6A 7.5A Description This MOSFET is Diodes |
文字列「 DMNH4015 」「 4015SSD 」で始まる検索結果です。 |
部品説明 |
DMNH4015SSDQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET ADVANACDEVDA INNCFEOIRNMFAOTRIMOANTION DMNH4015SSDQ Product Summary V(BR)DSS 40V RDS(on) max 15mΩ @ VGS = 10V 20mΩ @ VGS = 4.5V 40V +175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits ID TA = +25°C 8.6A 7.5A Rated to +175C – Ideal for High A Diodes |
2N4015 DUAL AMPLIFIER TRANSISTOR MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector 1 to Collector 2 Voltage Voltage Rating and Lead to Case Collector-Base Voltage Emitter-Base Voltage Base Current —Collector Current Continuous @Total Device Dissipation T/ = 25°C Derate above 25°C @Total Device Dissi Motorola Semiconductors |
2SC4015 Chroma amplifier transistor 2SC3415S / 2SC4015 Transistors Chroma amplifier transistor (300V, 0.1A) 2SC3415S / 2SC4015 !Features 1) High breakdown voltage. (BVCEO=300V) 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit. !External dimensions (Units : mm) 2SC3415S 3 4 2 ROHM Semiconductor |
2SC4015 (2SC3270M / 2SC4015) Triple Diffused Planar NPN Silicon Transistors ROHM Semiconductor |
2SC4015 Chroma Amplifier Transistor 2SC4061K / 2SC3415S / 2SC4015 Transistors Chroma amplifier transistor (300V, 0.1A) 2SC4061K / 2SC3415S / 2SC4015 zFeatures 1) High breakdown voltage. (BVCEO=300V) 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit. zExternal dimensions (Unit : ROHM Semiconductor |
2SK4015 Switching Regulator Applications 2SK4015 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS VI) 2SK4015 Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.60 Ω (typ.) High forward transfer admittance: |Yfs| = 7.4 S (typ.) Low l Toshiba Semiconductor |
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