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Datasheet DMN65D8L Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | DMN65D8L | N-CHANNEL ENHANCEMENT MODE MOSFET DMN65D8L
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 60V RDS(ON) 3Ω @ VGS = 10V 4Ω @ VGS = 5V Package ID TA = +25°C 310mA 270mA
Features
• • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mou |
 Diodes |
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| 4 | DMN65D8LDW | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT
DMN65D8LDW
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 60V
RDS(ON)
8Ω @ VGS = 5V 6Ω @ VGS = 10V
Package SOT363
ID TA = +25°C
170mA
200mA
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain super |
Diodes |
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| 3 | DMN65D8LFB | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT
DMN65D8LFB
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET
Product Summary
V(BR)DSS 60V
RDS(ON) 3.0Ω @ VGS = 10V 4.0Ω @ VGS = 5V
ID TA = +25°C
400mA
330mA
Features and Benefits
N-Channel MOSFET Low On-Resistance Low Gate-Threshold Voltage Low-Input Capacitance Fast |
Diodes |
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| 2 | DMN65D8LQ | N-CHANNEL ENHANCEMENT MODE MOSFET DMN65D8LQ
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 60V
RDS(ON)
3Ω @ VGS = 10V 4Ω @ VGS = 5V
Package SOT23
ID TA = +25°C
310mA
270mA
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performan |
Diodes |
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| Número de pieza | Descripción | Fabricantes | |
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