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Datasheet DMN53D0L Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | DMN53D0L | N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT
DMN53D0L
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
V(BR)DSS 50V
RDS(ON)
1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V
ID TA = +25°C
500 mA
200 mA
Description and Applications
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet main |
 Diodes |
 |
| 5 | DMN53D0LDW | N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT
DMN53D0LDW
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
V(BR)DSS 50V
RDS(ON)
1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V
ID TA = +25°C
360mA
250mA
Description
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet m |
Diodes |
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| 4 | DMN53D0LQ | N-CHANNEL ENHANCEMENT MODE MOSFET DMN53D0LQ
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
V(BR)DSS 50V
RDS(ON)
1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V
ID TA = +25°C
500 mA
200 mA
Features and Benefits
Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Spee |
Diodes |
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| 3 | DMN53D0LT | N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT
DMN53D0LT
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
V(BR)DSS 50V
RDS(ON)
1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V
ID TA = +25°C
350 mA
200 mA
Description and Applications
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet mai |
Diodes |
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| Número de pieza | Descripción | Fabricantes | |
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