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Datasheet DMN3200U Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | DMN3200U | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DMN3200U
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
• Low On-Resistance • 90 mΩ @ VGS = 4.5V • 110 mΩ @ VGS = 2.5V • 200 mΩ @ VGS = 1.5V Very Low Gate Threshold Voltage Low Input Capacitance ESD Protected Gate |
 Diodes |
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| 1 | DMN3200U | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product specification
DMN3200U
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance • 90 mΩ @ VGS = 4.5V • 110 mΩ @ VGS = 2.5V • 200 mΩ @ VGS = 1.5V Very Low Gate Threshold Voltage Low Input Capacitance ESD Protected Gate Fast Switching Speed Lead, Halogen and |
 TY Semiconductor |
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