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Datasheet DMN3032LE Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 DMN3032LE   N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRODUCT DMN3032LE 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(on) max 29mΩ @ VGS = 10V 35mΩ @ VGS = 4.5V ID TA = +25°C 5.6A 4.8A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior s
Diodes
Diodes
datasheet DMN3032LE pdf

DMN303 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
DMN3030LSS

SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet.es DMN3030LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features • Low On-Resistance • 18mΩ @ VGS = 10V • 30mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Spe
Diodes Incorporated
Diodes Incorporated
datasheet pdf - Diodes Incorporated
DMN3033LSDQ

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DMN3033LSDQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) max 20mΩ @ VGS = 10V 27mΩ @ VGS = 4.5V ID max TA = +25°C 6.9A 5.8A Description This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching
Diodes
Diodes
datasheet pdf - Diodes
DMN3030LFG

N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRODUCT   Green DMN3030LFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary V(BR)DSS 30V RDS(ON) 18mΩ @ VGS = 10V 27mΩ @ VGS = 4.5V Package POWERDI 3333-8 ID TA = +25°C 8.6A 5.5A Description This new generation MOSFET has been designed to minimize the
Diodes
Diodes
datasheet pdf - Diodes


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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Sanken
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