DMN3016LFDF データシート PDFこの部品の機能は「N-channel Enhancement Mode Mosfet」です。 |
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部品番号 |
DMN3016LFDF N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INNEFWORPRMOADTIUOCNT DMN3016LFDF N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) Max 12mΩ @ VGS = 10V 16mΩ @ VGS = 4.5V ID Max TA = 25°C 10A 8.5A Description an Diodes |
文字列「 DMN3016 」「 3016LFDF 」で始まる検索結果です。 |
部品説明 |
DMN3016LDN DUAL N-CHANNEL ENHANCEMENT MODE MOSFET ADVANNCEEWD IPNRFOODRUMCATTION DMN3016LDN 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Device V(BR)DSS N-Channel 30V RDS(ON) max 20mΩ @ VGS = 10V 24mΩ @ VGS = 4.5V ID MAX TA = +25°C 7.3A 6.7A Description This MOSFET is designed to minimize the on-state re Diodes |
DMN3016LDV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INFORMATION DMN3016LDV DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary BVDSS 30V RDS(ON) max 12mΩ @ VGS = 10V 17mΩ @ VGS = 4.5V ID max TC = +25°C 21A 18A Description This new generation MOSFET is designed to minimize the on-state resistance Diodes |
DMN3016LFDE N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INNEFWORPRMOADTIUOCNT DMN3016LFDE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) max 12mΩ @ VGS = 10V 16mΩ @ VGS = 4.5V ID max TA = +25°C 10A 8.5A Description and Applications This MOSFET has been designed to minimize the on-state resist Diodes |
DMN3016LK3 N-CHANNEL ENHANCEMENT MODE MOSFET A D VNAEN CWEPDRIONDFUOCRTM A T I O N DMN3016LK3 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(on) 12mΩ @ VGS = 10V 16mΩ @ VGS = 4.5V ID TC = +25°C 37.8A 32.8A Features 100% Unclamped Inductive Switch (UIS) Test in Production Low On-Res Diodes |
DMN3016LPS N-CHANNEL ENHANCEMENT MODE MOSFET ANDEV AWNPNCREEOWIDNPUFRCOOTRDMUACTTI O N DMN3016LPS 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary V(BR)DSS 30V RDS(ON) max 12m @ VGS = 10V 16m @ VGS = 4.5V ID TA = +25°C 10.8A 9.5A Description and Applications This new generation MOSFET has been de Diodes |
DMN3016LSS N-CHANNEL ENHANCEMENT MODE MOSFET ADVNAENWCEP IRNNOEFDWOURPCRTMOADTIUOCNT DMN3016LSS 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) max 12mΩ @ VGS = 10V 16mΩ @ VGS = 4.5V ID max TA = 25°C 10.3 A 9.3 A Description This MOSFET has been designed to minimize the on-state resista Diodes |
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