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Datasheet DMN26D0UDJ Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 DMN26D0UDJ   DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DMN26D0UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features • • Dual N-Channel MOSFET Low On-Resistance: • 3.0 Ω @ 4.5V • 4.0 Ω @ 2.5V • 6.0 Ω @ 1.8V • 10 Ω @ 1.5V Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance Fast Switching Speed Ultra-Small S
Diodes
Diodes
datasheet DMN26D0UDJ pdf

DMN26D0 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
DMN26D0UT

N-CHANNEL ENHANCEMENT MODE MOSFET

DMN26D0UT N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features • Low On-Resistance: • 3.0 Ω @ 4.5V • 4.0 Ω @ 2.5V • 6.0 Ω @ 1.8V • 10 Ω @ 1.5V Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance Fast Sw
Diodes
Diodes
datasheet pdf - Diodes
DMN26D0UFB4

N-CHANNEL ENHANCEMENT MODE MOSFET

DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) 3.0Ω @ VGS = 4.5V 20V 6.0Ω @ VGS = 1.8V ID TA = 25°C 240mA 170mA Features and Benefits • • N-Channel MOSFET Low On-Resistance: • 3.0 Ω @ 4.5V • 4.0 Ω @ 2.5V • 6.0 Ω @ 1.8V • 10 Ω @
Diodes
Diodes
datasheet pdf - Diodes
DMN26D0UDJ

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DMN26D0UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features • • Dual N-Channel MOSFET Low On-Resistance: • 3.0 Ω @ 4.5V • 4.0 Ω @ 2.5V • 6.0 Ω @ 1.8V • 10 Ω @ 1.5V Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance Fast Switching
Diodes
Diodes
datasheet pdf - Diodes


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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