Datasheet DMN2011UFDF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	DMN2011UFDF	20V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary BVDSS 20V RDS(ON) 9.5mΩ @ VGS = 4.5V 11mΩ @ VGS = 2.5V ID Max TA = +25°C 11.7A 10.8A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for hig	Diodes

DMN2011U Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
DMN2011UFDF	20V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary BVDSS 20V RDS(ON) 9.5mΩ @ VGS = 4.5V 11mΩ @ VGS = 2.5V ID Max TA = +25°C 11.7A 10.8A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, mak	Diodes
DMN2011UFX	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INFORMATION Product Summary V(BR)DSS 20V RDS(ON) max 9.5mΩ @ VGS = 4.5V 13mΩ @ VGS = 2.5V ID max TA = +25°C 12.2 A 10.4 A DMN2011UFX DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits • Low On-Resistance • Low Input Capacitance • Fast Switching S	Diodes
DMN2011UFDE	N-CHANNEL ENHANCEMENT MODE MOSFET ADVAADNVCAENDC IENIFNOFROMRAMTAITOINON Product Summary V(BR)DSS 20V RDS(ON) max 9.5mΩ @ VGS = 4.5V 11mΩ @ VGS = 2.5V ID max TA = +25°C 11.7A 10.8A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior	Diodes

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