Datasheet DMN2004DWKQ Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	DMN2004DWKQ	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary V(BR)DSS 20V RDS(ON) max 0.55Ω @ VGS = 4.5V ID TA = +25°C 540mA Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. A	Diodes

DMN2004D Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
DMN2004DMK	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DMN2004DMK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Moun	Diodes
DMN2004DWK	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary V(BR)DSS 20V RDS(on) max 0.55Ω @ VGS = 4.5V ID TA = +25°C 540mA Description This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power managem	Diodes Incorporated
DMN2004DWKQ	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary V(BR)DSS 20V RDS(ON) max 0.55Ω @ VGS = 4.5V ID TA = +25°C 540mA Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power managem	Diodes

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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