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Datasheet DMN10H220LVT Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 DMN10H220LVT   N-CHANNEL ENHANCEMENT MODE MOSFET

ADVANCE INFORMATION DMN10H220LVT 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(on) max 220mΩ @ VGS = 10V 250mΩ @ VGS = 4.5V ID TA = +25°C 2.24A 2.10A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintai
 Diodes
Diodes		 datasheet DMN10H220LVT pdf

DMN10H220 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
DMN10H220LE

N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRODUCT DMN10H220LE 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(on) max 220mΩ @ VGS = 10V 250mΩ @ VGS = 4.5V ID TA = +25°C 2.3A 2.1A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and ye
 Diodes
Diodes		 datasheet pdf - Diodes
DMN10H220L

N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRODUCT DMN10H220L 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(on) max 220mΩ @ VGS = 10V 250mΩ @ VGS = 4.5V ID TA = +25°C 1.6A 1.3A Features and Benefits • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low I
 Diodes
Diodes		 datasheet pdf - Diodes
DMN10H220LVT

N-CHANNEL ENHANCEMENT MODE MOSFET

ADVANCE INFORMATION DMN10H220LVT 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(on) max 220mΩ @ VGS = 10V 250mΩ @ VGS = 4.5V ID TA = +25°C 2.24A 2.10A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(
 Diodes
Diodes		 datasheet pdf - Diodes


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Número de pieza Descripción Fabricantes PDF
SPS122

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