Datasheet DMN10H220LQ Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	DMN10H220LQ	100V N-CHANNEL ENHANCEMENT MODE MOSFET DMN10H220LQ 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) max 220mΩ @ VGS = 10V 250mΩ @ VGS = 4.5V ID max TA = +25°C 1.6A 1.3A Description and Applications This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to	Diodes

DMN10H22 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
DMN10H220LE	N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT DMN10H220LE 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(on) max 220mΩ @ VGS = 10V 250mΩ @ VGS = 4.5V ID TA = +25°C 2.3A 2.1A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and ye	Diodes
DMN10H220L	N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT DMN10H220L 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(on) max 220mΩ @ VGS = 10V 250mΩ @ VGS = 4.5V ID TA = +25°C 1.6A 1.3A Features and Benefits • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low I	Diodes
DMN10H220LVT	N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION DMN10H220LVT 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(on) max 220mΩ @ VGS = 10V 250mΩ @ VGS = 4.5V ID TA = +25°C 2.24A 2.10A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(	Diodes

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Número de pieza	Descripción	Fabricantes	PDF
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