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Datasheet DMN10H220L Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | DMN10H220L | N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT
DMN10H220L
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 100V
RDS(on) max
220mΩ @ VGS = 10V 250mΩ @ VGS = 4.5V
ID TA = +25°C
1.6A
1.3A
Features and Benefits
• Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage |
Diodes |
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3 | DMN10H220LE | N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT
DMN10H220LE
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 100V
RDS(on) max
220mΩ @ VGS = 10V 250mΩ @ VGS = 4.5V
ID TA = +25°C
2.3A
2.1A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior |
Diodes |
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2 | DMN10H220LQ | 100V N-CHANNEL ENHANCEMENT MODE MOSFET DMN10H220LQ
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 100V
RDS(ON) max
220mΩ @ VGS = 10V 250mΩ @ VGS = 4.5V
ID max TA = +25°C
1.6A
1.3A
Description and Applications
This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to |
Diodes |
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1 | DMN10H220LVT | N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION
DMN10H220LVT
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 100V
RDS(on) max
220mΩ @ VGS = 10V 250mΩ @ VGS = 4.5V
ID TA = +25°C
2.24A
2.10A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintai |
Diodes |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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