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Datasheet DMN10H220L Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
4 DMN10H220L   N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRODUCT DMN10H220L 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(on) max 220mΩ @ VGS = 10V 250mΩ @ VGS = 4.5V ID TA = +25°C 1.6A 1.3A Features and Benefits • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage
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Diodes
datasheet DMN10H220L pdf
3 DMN10H220LE   N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRODUCT DMN10H220LE 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(on) max 220mΩ @ VGS = 10V 250mΩ @ VGS = 4.5V ID TA = +25°C 2.3A 2.1A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior
Diodes
Diodes
datasheet DMN10H220LE pdf
2 DMN10H220LQ   100V N-CHANNEL ENHANCEMENT MODE MOSFET

DMN10H220LQ 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) max 220mΩ @ VGS = 10V 250mΩ @ VGS = 4.5V ID max TA = +25°C 1.6A 1.3A Description and Applications This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to
Diodes
Diodes
datasheet DMN10H220LQ pdf
1 DMN10H220LVT   N-CHANNEL ENHANCEMENT MODE MOSFET

ADVANCE INFORMATION DMN10H220LVT 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(on) max 220mΩ @ VGS = 10V 250mΩ @ VGS = 4.5V ID TA = +25°C 2.24A 2.10A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintai
Diodes
Diodes
datasheet DMN10H220LVT pdf


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Número de pieza Descripción Fabricantes PDF
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