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Datasheet DMN10H170SVTQ Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 DMN10H170SVTQ   100V N-CHANNEL ENHANCEMENT MODE MOSFET

ADVANCED INNEFWORPRMOADTIUOCNT Product Summary BVDSS 100V RDS(ON) Max 160mΩ @ VGS = 10V 200mΩ @ VGS = 4.5V ID Max TA = +25°C 2.6A 2.3A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it id
 Diodes
Diodes		 datasheet DMN10H170SVTQ pdf

DMN10H170S Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
DMN10H170SK3

N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRODUCT DMN10H170SK3 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(ON) Max 140mΩ @ VGS = 10V 160mΩ @ VGS = 4.5V ID TC = +25°C 12A 11A Features  Low On-Resistance  Low Input Capacitance  Totally Lead-Free & Fully RoHS Compliant (N
 Diodes
Diodes		 datasheet pdf - Diodes
DMN10H170SFDE

N-CHANNEL ENHANCEMENT MODE MOSFET

ADVANACDEVDA INNCFEOIRNMFAOTRIMOANTION Product Summary V(BR)DSS 100V RDS(ON) max 160mΩ @ VGS = 10V 200mΩ @ VGS = 4.5V ID max TA = +25°C 2.9A 2.6A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior s
 Diodes
Diodes		 datasheet pdf - Diodes
DMN10H170SVTQ

100V N-CHANNEL ENHANCEMENT MODE MOSFET

ADVANCED INNEFWORPRMOADTIUOCNT Product Summary BVDSS 100V RDS(ON) Max 160mΩ @ VGS = 10V 200mΩ @ VGS = 4.5V ID Max TA = +25°C 2.6A 2.3A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching perfo
 Diodes
Diodes		 datasheet pdf - Diodes


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
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