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DME3057 データシート PDF

この部品の機能は「Schottky Medium Barrier Diode」です。


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部品番号
DME3057

SCHOTTKY MEDIUM BARRIER DIODE


DME3057 SCHOTTKY MEDIUM BARRIER DIODE www.Datasheet.jp PACKAGE STYLE 820 DESCRIPTION: The ASI DME3057 is a Medium Barrier Schottky Diode designed for General Purpose Mixer Applications. FEATURES


Advanced Semiconductor
Advanced Semiconductor

データシート pdf



文字列「 DME3057 」「 3057 」で始まる検索結果です。

部品説明

2N3057

Chip Type 2C3019 Geometry 4500 Polarity PNP

Data Sheet No. 2C3019 Chip Type 2C3019 Geometry 4500 Polarity PNP Generic Packaged Parts: 2N3019, 2N3057 Chip type 2C3019 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: 2N3019, 2N3019S, 2N3019UB, 2N3057, 2N3057A, 2N3700, 2N3700UB, SD3019

Semicoa Semiconductor
Semicoa Semiconductor

 データシート pdf


2N3057A

LOW POWER NPN SILICON TRANSISTOR

TECHNICAL DATA LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Devices 2N3019 2N3019S 2N3057A 2N3700 2N3700S Qualified Level JAN JANTX JANTXV JANS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Curren

Microsemi
Microsemi

 データシート pdf


2N3057A

Type 2N3057A Geometry 4500 Polarity NPN

Data Sheet No. 2N3057A Type 2N3057A Geometry 4500 Polarity NPN Qual Level: JAN - JANS Features: • • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-46 case. Also available in chip form using the 4500 chip geometry. The Min and M

Semicoa Semiconductor
Semicoa Semiconductor

 データシート pdf


2N3057A

NPN Low Power Silicon Transistor

2N3057A, 2N3700, 2N3700UB NPN Low Power Silicon Transistor Features  JANS Qualified to MIL-PRF-19500/391  2N3700 & 2N3700UB available in JANSR JEDEC registered 2N3700, 2N3057  Lightweight & Low Power  Ideal for Space, Military, & other High Reliability Applications �

MA-COM
MA-COM

 データシート pdf


2SK3057

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3057 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3057 PACKAGE Isolated TO-220 DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching application.

NEC
NEC

 データシート pdf


AN3057

Solving Sequential Problems

Freescale Semiconductor Application Note Document Number: AN3057 Rev. 0, 01/2006 Solving Sequential Problems in Parallel An SIMD Solution to RSA Cryptography by Bo Lin Digital Systems Division, NCSG East Kilbride, Scotland 1 Overview This paper presents

Freescale
Freescale

 データシート pdf

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