DK2712FAM データシート PDFこの部品の機能は「Fast Switching Thyristor」です。 |
検索結果を表示する |
部品番号 |
DK2712FAM Fast Switching Thyristor DK27..FA DK27..FA Fast Switching Thyristor Replaces January 2000 version, DS4269-3.0 DS4269-4.0 July 2001 FEATURES s Low Switching Losses At High Frequency s Fully Characterised For Operation Up To Dynex |
文字列「 DK2712 」「 2712FAM 」で始まる検索結果です。 |
部品説明 |
DK2712FAK Fast Switching Thyristor DK27..FA DK27..FA Fast Switching Thyristor Replaces January 2000 version, DS4269-3.0 DS4269-4.0 July 2001 FEATURES s Low Switching Losses At High Frequency s Fully Characterised For Operation Up To 20kHz KEY PARAMETERS VDRM IT(RMS) ITSM dVdt dI/dt tq 1200V 290A 5000A 200V/µs Dynex |
27128 NMOS 128K 16K x 8 UV EPROM M27128A NMOS 128K (16K x 8) UV EPROM FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE 5 V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM FAST PROGRAMMING ALGORITHM ELECTRONIC SIGNATURE PROGRAMMING VOLTAGE: 12V 28 1 FDIP28W (F) DESC STMicroelectronics |
27128A 128K Production and UV EPROM 27128A 128K (16K x 8) PRODUCTION AND UV ERASABLE PROMs • Fast 150 nsec Access Time - HMOS* 11-E Technology • Low Power - 100 mA Maximum Active - 40 mA Maximum Standby • intellgent Identifier™ Mode - Automated Programming Operations • ± 10% Vee Tolerance Available � Intel |
2N2712 (2N2xxx) NPN Transistor Free Datasheet http:/// Free Datasheet http:/// Free Datasheet http:/// Free Datasheet http:/// Free Datasheet http:/// SPRAGUE |
2SC2712 Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2712 2SC2712 Audio Frequency General Purpose Amplifier Applications Unit: mm • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 Toshiba Semiconductor |
2SC2712 AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2SC2712 AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current : VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise 3 NPN SILICON TRANSISTOR 1 2 SOT-23 *Pb Unisonic Technologies |
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