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Datasheet DG858BW45 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | DG858BW45 | Gate Turn-off Thyristor DG858BW45
DG858BW45
Gate Turn-off Thyristor
Replaces July 1999 version, DS4096-3.0 DS4096-4.0 January 2000
FEATURES
q q q q q q
Double Side Cooling High Reliability In Service High Voltage Capability Fault Protection Without Fuses High Surge Current Capability Turn-off Capability Allows Reduction |  Dynex | thyristor |
DG8 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | DG8040C | Fixed Inductors for Surface Mounting Fixed Inductors for Surface Mounting
表面贴装固定电感器
DG8040C
Inductance Range: 1.0~100H
Recommended patterns 推荐焊盘尺寸
(Unit: mm)
(Unit: mm)
FEATURES 特点
Low Profile (H=4.0mm Max). Magnetic Shield. Ideal for a variety of DC-DC converter inductor
applicatio  TOKO inductor | | |
| 2 | DG808BC45 | Gate Turn-off Thyristor DG808BC45
Gate Turn-off Thyristor
DS5914-2 July 2014 (LN31731)
FEATURES
Double Side Cooling High Reliability In Service High Voltage Capability Fault Protection Without Fuses High Surge Current Capability
Turn-off Capability Allows Reduction in Equipment Size and Weight. Low Noise Emission Reduces Dynex thyristor | | |
| 3 | DG830 | N-CHANNEL ENHANCEMENT MODE MOSFET DG830
N 沟道增强型场效应晶体管 N-CHANNEL ENHANCEMENT MODE MOSFET
版本号：V1.0
产品概述 General Description
DG830是N沟道增强型场效应晶体管，应用了东光微电的相关专利技术，采用自对准平面工 艺及先进的终端耐压技术，降低了导通损耗  DGME mosfet | | |
| 4 | DG840 | N-CHANNEL ENHANCEMENT MODE MOSFET DG840
N 沟道增强型场效应晶体管 N-CHANNEL ENHANCEMENT MODE MOSFET
版本号：V1.0
产品概述 General Description
DG840是N沟道增强型场效应晶体管，应用了东光微电的相关专利技术，采用自对准平面工 艺及先进的终端耐压技术，降低了导通损耗 DGME mosfet | | |
| 5 | DG858BW45 | Gate Turn-off Thyristor DG858BW45
DG858BW45
Gate Turn-off Thyristor
Replaces July 1999 version, DS4096-3.0 DS4096-4.0 January 2000
FEATURES
q q q q q q
Double Side Cooling High Reliability In Service High Voltage Capability Fault Protection Without Fuses High Surge Current Capability Turn-off Capability Allows Reduction Dynex thyristor | | |
| 6 | DG858DW45 | Gate Turn-Off Thyristor DG858DW45
DG858DW45
Gate Turn-Off Thyristor
Replaces July 1999 version, DS4334-4.0 DS4334-4.1 May 2000
FEATURES
q q q q q q
Double Side Cooling High Reliability In Service High Voltage Capability Fault Protection Without Fuses High Surge Current Capability Turn-off Capability Allows Reduction In Dynex thyristor | | |
| 7 | DG884 | 8 x 4 Wideband Video Crosspoint Array DG884
Vishay Siliconix
8 x 4 Wideband Video Crosspoint Array
FEATURES
Routes Any Input to Any Output Wide Bandwidth: 300 MHz Low Crosstalk: −85 dB @ 5 MHz Double Buffered TTL-Compatible Latches with Readback D Low rDS(on): 45 W D Optional Negative Supply D D D D
BENEFITS
D D D D D D D Reduced Bo  Vishay Siliconix data | |
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