DFM600NXM45-F000 データシート PDFこの部品の機能は「Fast Recovery Diode Module」です。 |
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部品番号 |
DFM600NXM45-F000 Fast Recovery Diode Module Replaces DS5882-1.0 DFM600NXM45-F000 Fast Recovery Diode Module DS5882-2 April 2011 (LN28309) FEATURES Low Reverse Recovery Charge High Switching Speed Low Forward Volt Drop Isolated Dynex |
文字列「 DFM600NXM45F000 」「 600NXM45 」で始まる検索結果です。 |
部品説明 |
MBR60045CT (MBR60020CT - MBR60045CTR) SCHOTTKY DIODES Transys Electronics L I M I T E D MBR60020CT(R) THRU MBR60045CT(R) SCHOTTKY DIODES MODULE TYPE 600A Features High Surge Capability Types Up to 45V VRRM 600Amp Rectifier 20-45 Volts TWIN TOWER A R Maximum Ratings Operating Temperature: -40 C to +175 Storage Temperature: -40 TRANSYS |
MBR60045CT (MBR60045CT - MBR600100CTR) Schottky Power Diode Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR60045CT thru MBR600100CTR Silicon Schottky Diode, 600A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) P Naina Semiconductor |
MBR60045CT (MBR60045CT - MBR600100CTR) Silicon Power Schottky Diode Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ America Semiconductor |
MBR60045CT Silicon Power Schottky Diode Silicon Power Schottky Diode Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive MBR60045CT thru MBR600100CTR VRRM = 45 V - 100 V IF(AV) = 600 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices ha GeneSiC |
MBR60045CTR (MBR60020CT - MBR60045CTR) SCHOTTKY DIODES Transys Electronics L I M I T E D MBR60020CT(R) THRU MBR60045CT(R) SCHOTTKY DIODES MODULE TYPE 600A Features High Surge Capability Types Up to 45V VRRM 600Amp Rectifier 20-45 Volts TWIN TOWER A R Maximum Ratings Operating Temperature: -40 C to +175 Storage Temperature: -40 TRANSYS |
MBR60045CTR (MBR60045CT - MBR600100CTR) Schottky Power Diode Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR60045CT thru MBR600100CTR Silicon Schottky Diode, 600A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) P Naina Semiconductor |
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