DFLS1150 データシート PDFこの部品の機能は「1.0a High Voltage Schottky Barrier Rectifier」です。 |
検索結果を表示する |
部品番号 |
DFLS1150 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • Patented Interlocking Clip Design for High Surge Current Capacity • Lead Free Finish, RoHS C Diodes Incorporated |
文字列「 DFLS1150 」「 1150 」で始まる検索結果です。 |
部品説明 |
DFLS1150Q 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Product Summary (@+25°C) VRRM (V) 150 IO (A) 1.0 VF max (V) 0.82 Applications SMPS DC-DC Convert Freewheeling Diodes Reverse Polarity Protection Blocking Diodes DFLS1150Q 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERDI IR max (mA) 0.5 Features and Diodes |
1150MP 150W / 50V / Class C Avionics 1025 - 1150 Mhz 1150MP 150 Watts, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The 1150MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transis Advanced Power Technology |
1150PT Phase Control Thyristors SEMICONDUCTOR RRooHHSS SEMICONDUCTOR 1150PT Series RRooHHSS www.nellsemi.com Page 2 of 2 nELL |
2SA1150 TRANSISTOR (LOW FREQUENCY AMPLIFIER APPLICATIONS) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1150 2SA1150 Low Frequency Amplifier Applications Unit: mm • High hFE: hFE = 100~320 • Complementary to 2SC2710. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base vo Toshiba Semiconductor |
2SB1150 PNP SILICON DARLINGTON TRANSISTOR NEC |
41150 Toroidal Surface Mount Inductors 4100 SERIES Toroidal Surface Mount Inductors SELECTION GUIDE Nominal Inductance Inductance Range DC Resistance MAX DC Current Continuous Order Code 412R7 414R7 416R8 41100 41150 41220 41330 41470 41680 41101 41151 41221 41331 µH 2.7 4.7 6.8 10 15 22 33 47 68 100 150 220 330 C&D Technologies |
当社のサイトでは、半導体やセンサーからモーター、電源に至るまで、さまざまな製品のデータシートを簡単に検索してダウンロードできる集中型プラットフォームを提供しています。 |