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Datasheet DE275-201N25A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | DE275-201N25A | RF Power MOSFET DE275-201N25A
RF Power MOSFET
N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = |  IXYS Corporation | mosfet |
DE2 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | DE21Xxxxxxxxx | High Voltage Ceramic Capacitors !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice. Please check with our
sales representatives or product engineers before ordering. •  muRata capacitor | | |
| 2 | DE275-101N30A | RF Power MOSFET DE275-101N30A
RF Power MOSFET
N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = IXYS Corporation mosfet | | |
| 3 | DE275-102N06A | RF Power MOSFET DE275-102N06A
RF Power MOSFET
N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDC PDHS PDAMB RthJC RthJHS Symbol Test Conditions
Tc = 25°C Derate 2.0W/°C above 25°C Tc = 25°C
VDSS ID IXYS Corporation mosfet | | |
| 4 | DE275-201N25A | RF Power MOSFET DE275-201N25A
RF Power MOSFET
N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = IXYS Corporation mosfet | | |
| 5 | DE275-501N16A | RF Power MOSFET Directed Energy, Inc.
An
DE275-501N16A
RF Power MOSFET
Preliminary Data Sheet
IXYS Company
N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDHS PDAMB RthJHS TJ TJM Tstg TL Weight Symbol Test Conditions Chara IXYS Corporation mosfet | | |
| 6 | DE275X2-102N06A | RF Power MOSFET Directed Energy, Inc.
An
♦ ♦ ♦ ♦ ♦
DE275X2-102N06A
RF Power MOSFET
Preliminary Data Sheet
IXYS Company
Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching
VDSS ID25 RDS(on) PDHS
= = = =
1000 V 6A 2.0 Ω 750 W
The DE275X2-102N06A is IXYS Corporation mosfet | | |
| 7 | DE275X2-501N16A | RF Power MOSFET Directed Energy, Inc.
An
♦ ♦ ♦ ♦ ♦
DE275X2-501N16A
RF Power MOSFET
Preliminary Data Sheet
IXYS Company
Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching
VDSS ID25 RDS(on) PDHS
= = = =
500 V 16 A 0.5 Ω 750 W
The DE275X2-501N16A is IXYS Corporation mosfet | |
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