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Datasheet DCR5980Z Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | DCR5980Z | Phase Control Thyristor Target Information DCR5980Z
DCR5980Z
Phase Control Thyristor Target Information
DS5482-1.1 February 2002
FEATURES
s s s
Double Side Cooling High Surge Capability Low Inductance Internal Construction
KEY PARAMETERS VDRM (max) IT(AV) (max) ITSM dV/dt dI/dt
1800V 5985A 98000A 1000V/µs 250A/µs
APPLICATIONS
s s s
|
 Dynex Semiconductor |
 |
| 4 | DCR5980Z12 | Phase Control Thyristor Target Information DCR5980Z
DCR5980Z
Phase Control Thyristor Target Information
DS5482-1.1 February 2002
FEATURES
s s s
Double Side Cooling High Surge Capability Low Inductance Internal Construction
KEY PARAMETERS VDRM (max) IT(AV) (max) ITSM dV/dt dI/dt
1800V 5985A 98000A 1000V/µs 250A/µs
APPLICATIONS
s s s
|
Dynex Semiconductor |
|
| 3 | DCR5980Z14 | Phase Control Thyristor Target Information DCR5980Z
DCR5980Z
Phase Control Thyristor Target Information
DS5482-1.1 February 2002
FEATURES
s s s
Double Side Cooling High Surge Capability Low Inductance Internal Construction
KEY PARAMETERS VDRM (max) IT(AV) (max) ITSM dV/dt dI/dt
1800V 5985A 98000A 1000V/µs 250A/µs
APPLICATIONS
s s s
|
Dynex Semiconductor |
|
| 2 | DCR5980Z16 | Phase Control Thyristor Target Information DCR5980Z
DCR5980Z
Phase Control Thyristor Target Information
DS5482-1.1 February 2002
FEATURES
s s s
Double Side Cooling High Surge Capability Low Inductance Internal Construction
KEY PARAMETERS VDRM (max) IT(AV) (max) ITSM dV/dt dI/dt
1800V 5985A 98000A 1000V/µs 250A/µs
APPLICATIONS
s s s
|
Dynex Semiconductor |
|
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